The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 1990
Filed:
Sep. 29, 1988
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 49 ; 357 59 ; 357 65 ;
Abstract
A semiconductor device having a bipolar transistor with a trench is disclosed. An active region of the substrate is surrounded by the trench. Collector, base and emitter regions of the transistor are formed in the active region. A collector electrode is formed in a lower section of the trench, and a base electrode is formed in an upper section of the identical trench.
Ohi, Susumu. (1990). Semiconductor device having bipolar transistor with trench (U.S. Patent No. 4963957). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4963957
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile