The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 1990
Filed:
Feb. 07, 1989
Heinz Beneking, Aachen, DE;
Telefunken Electronic GmbH, Heilbronn, DE;
Abstract
The mean drift speed of charge carriers in a semiconductor element can be increased if this semiconductor element has narrow layers which are alternately n-doped and p-doped on their planes, with undoped semiconductor material between these layers. A structure of this type is however difficult to manufacture, since it requires both doping zones in layer thicknesses of 2 nm and undoped semiconductor material between these doped zones. The semiconductor element in accordance with the invention therefore has successive layer sequences comprising two highly-doped layers with opposing conductivity. A weakly doped intermediate layer is arranged between each pair of layer sequences. These structures in accordance with the invention can be manufactured with MBE, LPCVD and MDVPE methods. To increase the switching frequency of pin diodes this structure in accordance with the invention can be incorporated into the intrinsic zones of these diodes.