The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 1990
Filed:
Oct. 13, 1989
Hajime Masuda, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A programmable read only memory device according to the present invention has a plurality of memory cells each formed by, for example, a bipolar transistor or a series combination of a fuse element or a diode and associated with an addressing facility which has a plurality of row selector units coupled to word lines, respectively, and each of the row selector units has a decoder stage accompanied with an amplifying bipolar transistor and an output bipolar transistor coupled to the amplifying bipolar transistor for discharging a large amount of a write in current and a small amount of a read out current on the associated word line to the ground, wherein a diode is coupled between the associated word line and the amplifying bipolar transistor for supplying a part of the write in current through the amplifying bipolar transistor to the base node of the output bipolar transistor, so that the output bipolar transistor is decreased in transistor size by virtue of sharing the write in current between the collector node and the base node of the output bipolar transistor.