The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 1990
Filed:
Dec. 23, 1988
Maryn G Stapelbroek, Santa Ana, CA (US);
Michael D Petroff, Fullerton, CA (US);
Ramasesha Bharat, Orange, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
Electromagnetic energy is detected by providing an extrinsic impurity-band semiconducting region with a first conductivity type impurity concentration high enough to create an impurity energy band. An intrinsic semiconducting blocking region is provided with first and second conductivity type impurity concentrations which are low enough that substantially no charge transport occurs by an impurity conduction mechanism. An electrical potential is applied to the impurity-band and blocking regions to create an electric field across the regions, then the regions are exposed to electromagnetic energy to generate intrinsic charge carriers in the regions. The electrical current induced in the regions as a result of the intrinsic charge carrier generation is measured.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile