The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 1990
Filed:
Mar. 23, 1989
Applicant:
Inventors:
Tadashi Sakai, Kanagawa, JP;
Shigeki Uno, Tokyo, JP;
Masao Koyama, Kanagawa, JP;
Nanao Nakamura, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01N / ; G01N / ;
U.S. Cl.
CPC ...
204403 ; 204408 ; 204412 ; 204415 ; 204416 ; 357 25 ; 435291 ; 435817 ;
Abstract
A field-effect transistor-type semiconductor sensor is provided which comprises first and second semiconductor substrates bonded strongly to each other interposing a silicon oxide film therebetween by the use of a direct-bonding technique. The first semiconductor substrate is formed into an island-shape, and incorporates a source region, a drain region and a gate region. The island-shaped substrate constitutes an ion-sensitive portion, and is immersed in a solution when in use. The second semiconductor substrate has openings in which source and drain electrodes are formed.