The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1990
Filed:
Jan. 12, 1989
Applicant:
Inventors:
Masato Ishino, Osaka, JP;
Yoichi Sasai, Osaka, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 50 ; 357 16 ; 357 17 ; 357 56 ; 372 45 ;
Abstract
A semiconductor device includes a semiconductor substrate having a plurality of mesa stripes whose widths are different from each other. Quantum well layers are formed on the mesa stripes respectively and have different band gap energies. The quantum well layers include ultra-thin epitaxial layers respectively. Semiconductor elements are formed on the mesa stripes respectively and include the quantum well layers respectively. Thicknesses of the ultra-thin layers are preferably equal to or less than 500 angstroms.