The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1990
Filed:
May. 02, 1985
Hitachi, Ltd., Tokyo, JP;
Abstract
A dynamic RAM, in which the difference between a data signal level from one of a pair of complementary data lines coupled to a memory cell and a reference potential level of the other of the complementary data lines is differentially amplified by a sense amplifier. The data line taking the reference potential level is coupled to the other data line through a switch element so that its data line capacitance is increased. As a result, the reference potential level is held at a relatively stable level irrespective of a leakage current such as that caused by .alpha. particles. This construction makes it possible to use a full-size dummy cell because the capacitance of the data lines which takes the reference potential level is increased. The reference potential level achieved by the use of the full-size dummy cell is made relatively accurate because of the relative accuracy between the capacitances of the memory cells and the capacitance of the full-size dummy cell.