The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1990
Filed:
Feb. 06, 1985
Noritada Sato, Kanagawa, JP;
Fuji Electric Corporate Research & Development, Kanagawa, JP;
Abstract
A radiation or light detecting semiconductor element comprises a p-type monocrystalline silicon substrate having a high specific resistance of about 10,000 ohm-cm, a stopper layer formed in a part of a first principal surface of the substrate and diffused to provide a p-type conductivity material, an electrode diffusion layer of p.sup.+ type material formed in at least part of the remaining part of the first principal surface not provided with the stopper layer, so as to be diffused into an n-type conductivity material, a metal (silicon) oxide layer formed on substantially the entire first principal substrate surface, a first aluminum electrode provided through the metal oxide layer and electrically connected to the electrode diffusion layer, and a second electrode of laminated Cr-Ni-Au deposited electrically conductively on a second principal surface of the substrate. A method for producing the element is also disclosed.