The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 1990
Filed:
May. 15, 1987
Applicant:
Inventor:
Gary D Aden, Redwood City, CA (US);
Assignee:
Kevex Corporation, Foster City, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430296 ; 430942 ; 2504923 ;
Abstract
In an electron beam lithography system, a layer of photoresist is exposed in vacuum by a collimated flood beam of electrons passing through an electron mask in nominal contact with the photoresist to define the exposed images. The electron mask includes a mask wafer apertured to define one or more frames supporting one or more panes of electron permeable membrane material having an average atomic number less than 14 and each supporting a patterned layer of electron absorbing material defining the mask patterns. Suitable electron permeable membrane materials include BN, BC, SiC, Si.sub.3 N.sub.4 and Al.sub.4 C.sub.3 of a thickness of 0.1 .mu.m to 2 .mu.m.