The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 1990
Filed:
Oct. 12, 1989
Applicant:
Inventors:
Vida Ilderem, Puyallup, WA (US);
L Rafael Reif, Newton, MA (US);
Prabha K Tedrow, Lexington, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ;
U.S. Cl.
CPC ...
427 55 ; 427255 ; 4272552 ; 437200 ; 437225 ;
Abstract
The selective or blanket deposition of titanium silicide using a Very Low Pressure Chemical Vapor Deposition process is described. Silane and titanium tetrachloride are used as the silicon and titanium sources, respectively. A thin polysilicon layer is deposited prior to the silicide deposition to promote the nucleation of titanium silicide. It is shown that selective deposition is possible by controlling the polysilicon and the titanium silicide deposition times. The resulting titanium silicide films have resistivities in the range of 15-25 micro-ohms-cm.