The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 1990
Filed:
Jan. 26, 1990
Minoru Kato, Nagoya, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A zero-crossing type thyristor is formed in an N-type semiconductor substrate. A first P-type base layer, a second P-type base layer, and a first P-type emitter layer are formed in a main surface of the substrate and isolated from one another by semiconductor regions of the substrate. A second N-type emitter layer is formed in the first P-type base layer, and a third N-type emitter layer is formed in the second P-type base layer. The third N-type emitter layer is electrically connected to the first P-type base layer. A fourth P-type emitter layer is formed in an opposite surface of the substrate. The second N-type emitter layer, first P-tytpe base layer, N-type semiconductor region, and fourth P-type emitter layer constitute a vertical main thyristor of the zero-crossing type thyristor, and the third N-type emitter layer, second P-type base layer, N-type semiconductor region, and first P-type emitter layer constitute a lateral driving thyristor thereof.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile