The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 1990
Filed:
May. 30, 1989
Applicant:
Inventors:
Gordon Tam, Chandler, AZ (US);
Ronald N Legge, Scottsdale, AZ (US);
Wayne M Paulson, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437241 ; 437985 ; 437228 ;
Abstract
A method for differentially etching silicon nitride, preferably formed in a hydrogen free environment, wherein hydrogen is implanted into various regions of the silicon nitride. The silicon nitride may then be etched by a number of different etchants, some of which will etch the implanted regions appreciably faster and others which will etch the non-implanted regions more quickly. This method is especially useful in the fabrication of self-aligned gate devices.