The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 1990

Filed:

May. 19, 1989
Applicant:
Inventor:

Josephus M Van Laarhoven, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437180 ; 437187 ; 437194 ; 437195 ; 437228 ; 148D / ;
Abstract

A method of manufacturing a semiconductor device is described in which electrical contact is provided to an area (10) of an electrically conductive level (1) exposed through an opening (2) in a covering layer (3). A further layer is provided over the covering layer (3) as a first layer (4) of one material provided to a first thickness on the covering layer (3) and a second layer (5) of a different material provided to a second thickness on the first layer. The further layer is then etched anisotropically using an anisotropic etching process which etches the first and second layers (4) and (5) at different rates with the first layer (4) being etched more slowly than the second layer (5) so that, after anisotropic etching to expose the surface (3a) of the covering layer (3) and the area (10) of the electrically conductive level (1), the side walls (2a) of the opening (2) remain covered by the one material (40 ) and portions (50) of the different material extend on the one material (40) from the exposed area (10) up the side walls (2a) of the opening (2) for a distance less than the depth of the opening (2) in relation to the thickness of the first layer and the different rates at which the first and second layers 4 and 5 are etched. An electrically conductive layer (6) is then provided on the covering layer (3) to form an electrical contact with the exposed area (10) of the electrically conductive level (1).


Find Patent Forward Citations

Loading…