The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 1990

Filed:

Mar. 15, 1989
Applicant:
Inventors:

Takao Amazawa, Atsugi, JP;

Hiroaki Nakamura, Fujisawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
4272481 ; 118725 ; 427252 ; 427253 ; 427255 ; 4272552 ; 427299 ;
Abstract

A chemical vapor deposition method is characterized in that a heating block and a surface to be deposited of a substrate are arranged to face to each other at a given distance in a closed space, a source gas is guided into the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate. A chemical vapor deposition apparatus includes a heating block arranged in a closed space, a substrate holder for holding a substrate so that a surface to be deposited of the substrate is arranged to face to the heating block at a given distance, and a device for guiding a source gas to the closed space. In this CVD apparatus, the source gas guided by the device is guided to the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate.


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