The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 1990
Filed:
Aug. 08, 1988
Applicant:
Inventors:
Meckie T Harris, Nashua, NH (US);
John J Larkin, South Boston, MA (US);
Alton F Armington, Lexington, MA (US);
John K Kennedy, West Roxbury, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566 / ; 156D / ;
Abstract
Ultra high pure quartz is grown by a one step in-situ growth process where the nutrient is high purity silica. A negative temperature gradient is maintained between the nutrient zone and the seed zone until about the start of crystal growth. A sealable container made of silver contains the nutrient and the seed within the autoclave chamber.
Harris, Meckie. (1990). Process of making high quality single quartz crystal using silica glass (U.S. Patent No. 4956047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4956047
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile