The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 1990
Filed:
Jan. 21, 1988
Applicant:
Inventors:
Yoshihisa Mizutani, Tokyo, JP;
Minoru Kimura, Yokohama-shi, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 67 ; 357 42 ; 357 65 ; 357 68 ; 357 71 ; 357 59 ;
Abstract
Provided is a semiconductor device having a single continuous wiring layer in which a predetermined portion thereof is made of a semiconductor material, and the remaining portion thereof is made of a metal compound of the semiconductor material. The predetermined portion of the wiring layer preferably constitutes the gate electrode of a field effect transistor.
Mizutani, Yoshihisa. (1990). Semiconductor device with composite electrode (U.S. Patent No. 4954871). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4954871
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile