The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 1990
Filed:
Mar. 02, 1989
Applicant:
Inventor:
Friedhelm Bauer, Wurenlingen, CH;
Assignee:
Asea Brown Boveri Ltd., Baden, CH;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 39 ; 357 15 ;
Abstract
In an n-channel MCT (MOS-controlled thyristor), the p-doped channel region and the n.sup.+ -doped drain region are replaced by an n-doped combined channel-drain region (13) in the MOSFET structure of the switchable cathode short-circuits. The resulting MOSFET structure of the depletion type results in latch-up immunity for the component and makes possible a simple optimization of the current level which can be switched off as a maximum.