The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 1990
Filed:
May. 26, 1988
Applicant:
Inventor:
Winston K Chan, Fair Haven, NJ (US);
Assignee:
Bell Communications Research Inc., Livingston, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 15 ; 357 16 ; 357 22 ; 357 67 ;
Abstract
The formation on an indium gallium arsenide substrate of a cadmium-containing layer significantly enhances the Schottky-barrier height between an overlying metal and the substrate. Device structures such as gates for indium gallium arsenide field-effect transistors are thereby made feasible.
Chan, Winston. (1990). Schottky barrier on indium gallium arsenide (U.S. Patent No. 4954851). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4954851
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile