The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 1990
Filed:
Oct. 12, 1989
Kenkichi Tanioka, Tokyo, JP;
Mitsuo Kosugi, Tokyo, JP;
Junichi Yamazaki, Kawasaki, JP;
Keiichi Shidara, Tama, JP;
Kazuhisa Taketoshi, Sagamihara, JP;
Tatsuro Kawamura, Tama, JP;
Eikyuu Hiruma, Komae, JP;
Shiro Suzuki, Yokosuka, JP;
Takashi Yamashita, Sagamihara, JP;
Masaaki Aiba, Tokyo, JP;
Yochizumi Ikeda, Tokyo, JP;
Tadaaki Hirai, Koganei, JP;
Yukio Takasaki, Kawasaki, JP;
Sachio Ishioka, Burlingame, CA (US);
Tatsuo Makishima, Mitaka, JP;
Kenji Sameshima, Hachioji, JP;
Tsuyoshi Uda, Kodaira, JP;
Naohiro Goto, Machida, JP;
Yasuhiko Nonaka, Nobara, JP;
Eisuke Inoue, Mobara, JP;
Kazutaka Tsuji, Hachioji, JP;
Hirofumi Ogawa, Hachioji, JP;
Hitachi, Ltd, Tokyo, JP;
Nippon Hoso Kyokai, Tokyo, JP;
Abstract
A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.