The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 1990
Filed:
May. 05, 1989
Kuo-Hua Lee, Lehigh County, PA (US);
Chih-Yuan Lu, Lehigh County, PA (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A trench which provides electrical isolation between transistors on an integrated circuit substrate is described. The trench is lined with a diffusion barrier, typically a thermal oxide followed by a thermal stress relief layer, typically formed from TEOS. Then a filler material, typically BPTEOS, is deposited to fill the trench and cover the upper surface of the wafer. The filler material is heated to make it flow. Next the outer surface of the flowed filler material is next subjected to an etch-back which makes the top surface of the filled trench protrude slightly above the upper surface of the substrate. The resulting trench contains the diffusion barrier layer, the thermal stress relief layer, and the filler material. The filler material and the thermal stress relief layer will soften during subsequent heat treatments of the wafer, thus relieving thermal stresses, and preventing the occurrence of defects and dislocations within the wafer.