The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 1990
Filed:
Dec. 30, 1988
Daniel H Grantham, Glastonbury, CT (US);
Mario S Latina, Wethersfield, CT (US);
United Technologies Corporation, Hartford, CT (US);
Abstract
A pressure sensor (210) utilizing capacitance variations to sense pressure variations of the silicon-glass-silicon type (FIG. 3) including a conductive silicon substrate (212), a conductive silicon diaphragm (211) and a glass dielectric layer (213) therebetween forming a spacing wall (216) between them, in which dielectric drift and parasitic (non-pressure sensitive) capacitance is minimized by including a very thin, third, symmetrical, silicon, capacitive plate (220) in the glass wall (216). The third conductive plate encircles the central region (Cc) of the sensor and is located outside of it. Improved assembly techniques, including all symmetrical planar layers, for higher manufacturing yield and better long term reliability are also disclosed.