The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 1990
Filed:
Mar. 09, 1988
Martin Bechteler, Kirchheim, DE;
Wolfgang Gross, Unterfoehring, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
Conventional turnoff power semiconductor devices each comprise a p-n junction blocking in case of turnoff, one zone of which, lying at the p-n junction, has a high doping gradient. But this produces a low dynamic voltage stability characteristic for the power semiconductor device. To increase the dynamic voltage stability characteristic of the power semiconductor device, it is proposed to provide one zone in the form of a region having at least a width of twenty microns viewed from the p-n junction, wherein a maximum doping gradient dN.sub.2 /dx=5.times.10.sup.16 cm.sup.-4 and a predetermined basic dopant concentration is present.