The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 1990
Filed:
May. 11, 1989
Northern Telecom Limited, Montreal, CA;
Abstract
A logic gate comprises a bipolar switching transistor and a depletion mode field effect load device. A current independent voltage source and a voltage independent current source are connected in series between an input terminal of the logic gate and a base of the bipolar transistor. The voltage independent current source is a depletion mode field effect transistor having a source and drain which are connected in series with the current independent voltage source and the base of the bipolar transistor. A feedback device is connected in series between a gate of the current source field effect transistor and a gate of the load transistor. A discharge device is connected in parallel with the current independent voltage source for actively discharging a base-emitter junction of the bipolar transistor during switching of the bipolar transistor from an on state to an off state. The logic gate is particularly suitable for use in memory elements.