The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1990
Filed:
May. 19, 1988
Akihiko Okamoto, Tokyo, JP;
Keiichi Ohata, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A method of selective epitaxial growth includes a step of selectively forming an insulator film on a predetermined region of a semiconductor substrate and a step of evaporating a starting material containing a Group III element in vacuum in the presence of a Group V element to grow epitaxially a III-V compound semiconductor selectively on the semiconductor substrate under the condition where the partial pressure of the Group III element just above the semiconductor substrate is greater than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the semiconductor substrate and is smaller than the equilibrium vapor pressure of the Group III element contained in the III-V compound semiconductor existing on the insulator film. When InAs is grown epitaxially and selectively on a GaAs substrate, the GaAs substrate is kept at 500.degree. to 650.degree. C. and when GaAs is grown epitaxially and selectively on the GaAs substrate, the GaAs substrate is kept at 700.degree. to 775.degree. C.