The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1990
Filed:
Mar. 13, 1989
Helmold Kausche, Munich, DE;
Rolf Plaettner, Riemerling, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A method and apparatus are provided for improving the dangling-bond saturation in amorphous silicon-germanium semiconductor layers. The deposition from the vapor phase of germane, silane, and hydrogen proceeds on the basis of different plasma excitations in the same reactor, that are spatially separated. Capacitive and inductively coupled plasmas are generated at different locations, in such a manner that the two plasmas superimpose in a central substrate region. For increasing the ionization density, the inductively excited plasma has a dc magnetic field for resonance excitation superimposed on it perpendicular to the radio frequency magnetic field. Amorphous silicon-germanium layers containing hydrogen are produced that have a low density of states and are particularly suitable for thin-film tandem solar cells.