The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1990
Filed:
Jun. 09, 1989
Applicant:
Inventor:
Peter J Schubert, Kokomo, IN (US);
Assignee:
Delco Electronics Corporation, Kokomo, IN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ; H01L / ;
U.S. Cl.
CPC ...
156611 ; 156613 ; 156D / ; 156D / ; 148D / ; 437 90 ; 437 78 ; 437927 ;
Abstract
A method is disclosed for forming laterally grown epitaxial silicon without the requirement for subsequent thinning or planarization of the epitaxial silicon. Generally a low, wide cavity consisting of walls of dielectric material and having a side opening, or via hole, is formed and the epitaxial silicon is then selectively grown within the cavity. The resulting epitaxial silicon structure is characterized by being flat and wide with an aspect ratio of approximately 6 to 1.