The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 1990
Filed:
Jan. 06, 1987
Marcus Boehm, Plainsboro, NJ (US);
Chronar Corp., Princeton, NJ (US);
Abstract
Particulate semiconductor devices and method of preparation by a low temperature process. A particulate layer is screen printed on a metallized substrate and a rear contact is formed by alloying the semiconductor particules to the substrate. The layer is fired and a front Schottky contact applied. The resulting device has sharp diode IV-characteristics, low leakage current, and significant reverse break-down voltages. In the manufacture of efficient and red-enhanced particulate silicon pn-junction solar cells, prediffused particles are used, offering major advantages compared to other techniques, such as where the junction is formed after completion of a particulate layer.