The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 1990
Filed:
Sep. 18, 1989
David R Helms, Liverpool, NY (US);
General Electric Company, Syracuse, NY (US);
Abstract
The invention relates to a variable gain distributed amplifier for use at microwave frequencies, and fabricated in a monolithic microwave integrated circuit format. In the amplifier, the attenuation is varied, based upon digital control of a dual gate segmented FET. The amplifier has a nearly flat insertion phase and amplitude response, and an insertion phase response that varies only slightly between gain settings. The amplifier employs segmented dual gate field effect transistors as the gain elements, having their signal input and signal output electrodes which provide shunt capacities (C.sub.G1S, C.sub.DS) interconnected with serial inductances to form separate low pass transmission lines having relatively high cut-off frequencies. The amplifier has means to insure stability and uses Chebyshef equal ripple techniques to linearize the amplitude and insertion phase response.