The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 1990
Filed:
Nov. 14, 1988
Tadashige Sato, Tsuchiura, JP;
Yasuji Kobashi, Tsuchiura, JP;
Mitsubishi Monsanto Chemical Co., Ltd., Tokyo, JP;
Mitsubishi Kasei Corporation, Tokyo, JP;
Abstract
In an epitaxial wafer comprising of a single crystalline substrate, a p type gallium aluminum arsenide mixed crystalline layer and n type gallium aluminum arsenide mixed crystalline layer having an indirect transition type band structure. The p type gallium aluminum arsenide mixed crystalline layer consists of a gallium aluminum arsenide mixed crystalline layer having a direct transition type band structure, positioned about 3 to 10 .mu.m from the pn junction and a gallium aluminum arsenide mixed crystalline layer having an indirect transition type band structure. The aluminum arsenide mixed crystal ratio in the gallium aluminum arsenide is exponentially and gradually changed in the region between the direct transition type layer and the indirect transition type layer.