The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 1990
Filed:
Apr. 17, 1989
Applicant:
Inventors:
Masahiro Kotaki, Nagoya, JP;
Masafumi Hashimoto, Nagoya, JP;
Assignees:
Toyoda Gosei Co., Ltd., Nishikasugai, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi, JP;
Research Development Corporation of Japan, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156656 ; 156662 ;
Abstract
A dry etching method for Al.sub.x Ga.sub.1-x N(0.ltoreq.x.ltoreq.1) semiconductor is disclosed. The method includes a first method using plasma of carbon tetrachloride (CCl.sub.4) gas, and a second method using plasma of dichlorodifluoromethane (CCl.sub.2 F.sub.2) gas. The etching speed of the former method was 430 .ANG./min. and the etching speed of the latter method was 625 .ANG./min. Also, no crystal defect was produced in the above-mentioned semiconductor by the above-mentioned etching.