The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 1990
Filed:
Jul. 25, 1989
Jens-Peter Krumme, Hamburg, DE;
John Petruzello, Briarcliff Manor, NY (US);
Wolfgang Radtke, Scharbeutz, DE;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing iron garnet layers on a substrate, in a layer sequence of different order by means of RF-cathode sputtering in an inert gas plasma, using a target comprising predominantly an iron garnet phase in addition to residual phases having a substantially equal sputtering rate, the ions of said inert gas plasma bombarding the growing layer having an ion energy of less than 10.sup.2 eV and a pressure in the range from 0.1 to 2.0 Pa, in which method RF-power is fed into the target electrode (cathode) at a RF-voltage of approximately 200 V.sub.rms, thereby first depositing an amorphous to X-ray amorphous iron garnet layer as an intermediate layer at a substrate temperature below 460.degree. C. and, subsequently, a polycrystalline iron garnet layer at a substrate temperature exceeding 520.degree. C., while simultaneously applying a RF-voltage of approximately 50 V.sub.rms to the substrate electrode, which voltage is linearly reduced during the deposition of the first 5-10 nm of the layer to a floating potential relative to earth.