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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4943837 B1

PDFFull Text
Date of Patent:
Jul. 24, 1990

Filed:

Mar. 10, 1988

Thin film semiconductor device and method of fabricating the same

Applicant:
Inventors:

Nobutake Konishi, Hitachiota, JP;

Kikuo Ono, Hitachi, JP;

Takaya Suzuki, Katsuta, JP;

Kenji Miyata, Katsuta, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Antonelli, Terry, Stout & Kraus

Primary Examiner:

Rolf Hille

Assistant Examiner:

Robert P Limanek

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357 64 ; 437937 ; 437 21 ;
Abstract

A thin film transistor and a method of fabricating the transistor are disclosed. The gate electrode of this thin film transistor is made small in thickness so that active hydrogen for hydrogenating passivation can penetrate in a surface layer of channel region having substantially uniform thickness, through the gate electrode. Thus, hydrogenation can be effectively carried out for the thin film transistor, independently of the length of a channel formed in the transistor.

Find Patent Forward Citations

Konishi, Nobutake. (1990). Thin film semiconductor device and method of fabricating the same (U.S. Patent No. 4943837). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4943837

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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