The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 1990
Filed:
Sep. 29, 1988
Shigenori Yakushiji, Yokohama, JP;
Kouji Jitsukata, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A zero-cross thyristor comprises an n-type substrate region surrounded by a p-type region, a p-type base region formed in the n-type substrate region and surrounding an n-type inner region of the n-type substrate region, and a p-type floating region formed in the n-type inner region. An n-channel MOS transistor whose gate is connected to the floating region is formed in the p-type base region. A first p.sup.+ -type diffusion region whose depth is less than that of the p-type base region is continuously formed in the p-type base region and the n-type inner region and a second p.sup.+ -type diffusion region whose depth is also less than that of the p-type floating region. The distance between the first and second diffusion regions is set to a predetermined value for preventing the breakdown of the gate insulating layer of the MOS transistor.