The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 1990
Filed:
Oct. 10, 1984
Hideo Nojima, Nara, JP;
Yoshimi Kojima, Nara, JP;
Eiji Imada, Nara, JP;
Toshiro Matsuyama, Tenri, JP;
Takashi Hayakawa, Tenri, JP;
Shiro Narikawa, Kashihara, JP;
Shaw Ehara, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An amorphous silicon (a-Si) photoreceptor includes an amorphous silicon (a-Si) photoconductive layer, and a surface layer disposed above the amorphous silicon (a-Si) photoconductive layer. An intermediate layer is disposed between the amorphous-silicon (a-Si) photoconductive layer and the surface layer to ensure the energy level matching. The intermediate layer is made of amorphous silicon (a-Si) doped with nitrogen and boron so as to have the energy difference of less than 0.2 eV between the bottom of the conduction bands of the surface layer and the intermediate layer.