The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 1990
Filed:
Dec. 15, 1988
Shigenori Yakushiji, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a thyristor to which a semiconductor device according to the present invention is applied, at least one p-n junction is exposed at one surface of a semiconductor substrate, a polysilicon field plate is formed, via an insulating film, over the p-n junction of the semiconductor substrate and a gate region formed therein, so that the exposed portion of the p-n junction is covered by the field plate, and two specific regions of the field plate are electrically connected to the gate region and cathode region to form a gate-cathode resistance between the gate region and the cathode region. The resistance of the polysilicon field plate, inserted between the gate region and the cathode region, can be determined by the length of the polysilicon field plate therebetween and/or the concentration of an impurity in the polysilicon field plate therebetween.