The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 1990
Filed:
Sep. 12, 1988
Osamu Tsukakoshi, Hiratsuka, JP;
Nihon Shinku Gijutsu Kabushiki Kaisha, Chigasaki, JP;
Abstract
A parallel sweeping system for electrostatic sweeping ion implanters comprising an ion source for generating an ion beam, first and second multipole beam deflectors along and around a common optical axis and a target wafer to be raster-scanned by the deflected beam. The two deflectors have the same number of electrodes of five or more and have similar configurations. One electrode of the first deflector is paired with an electrode of the second deflector in the same plane common with the optical axis, but on the opposite side of the optical axis. The same sweeping voltage is applied simultaneously to each electrode of a pair in the same plane and predetermined different voltages to each pair of electrodes. Thus, a substrate is constantly raster-scanned by means of parallel ion beams with predetermined direction, namely raster-scanned with the ion beam all over a large wafer with exact parallelism to the optical axis.