The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 1990
Filed:
Sep. 26, 1988
Applicant:
Inventors:
Johannes J Ponjee, Eindhoven, NL;
Fredericus J Touwslager, Eindhoven, NL;
Ivo G Camps, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437225 ; 437228 ; 437235 ; 437238 ; 437239 ; 437 96 ; 437 99 ; 357-8 ; 357 52 ; 357 72 ;
Abstract
The invention relates to a method of manufacturing a semiconductor device, in which methylated silyloxy groups are formed on a silicon oxide layer which protects a PN junction, the methylated silyloxy groups being formed to reduce the leakage current of the device. The method employs a solution in which an amine is present which is at least di-substituted.
Ponjee, Johannes. (1990). Pn junction passivation using methylated silyloxy groups (U.S. Patent No. 4940673). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4940673
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile