Circuit simulation method for semiconductor device including field

Abstract

A circuit simulation method and apparatus for simulating the operation of semiconductor devices, including field effect transistors (FETs), on the basis of the mask layout pattern of each semiconductor device. A circuit simulation method is performed by a computer which includes a first step of determining an equivalent circuit of the semiconductor device from the mask layout patterns, and a second step of producing a signal indicative of the operation of the equivalent circuit determined by the first step. The equivalent circuit is determined by extracting resistive area patterns of the FETs and calculating resistance values of FET signal paths to obtain FET equivalent resistances. The resistive area patterns are divided into a series of rectangles which are converted to equivalent resistive elements to then be arranged so that an equivalent resistive value can be calculated.