The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 1990
Filed:
May. 04, 1989
Kouichi Asakura, Tokyo, JP;
Junichi Miwa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
When a positive gate trigger signal is applied to a gate terminal of a gate-controlled bidirectional semiconductor switching device, a first auxiliary thyristor, made up of an n-type 7th layer, a p-type 4th layer, an n-type first layer, and a p-type 8th layer, is turned on, and a resultant on-current of the thyristor is fed as a gate current, through a second wiring, to a first main thyristor made up of an n-type 5th layer, a p-type second layer, an n-type first layer, and a p-type 8th layer, turning on the first main thyristor. When a negative gate trigger signal is applied to the gate terminal, a second auxiliary thyristor, made up of an n-type 6th layer, a p-type third layer, an n-type first layer, and a p-type 8th layer, is turned on. In this case, however, a rectifier prevents an on-current of the second auxiliary thyristor from flowing to the gate terminal through the 4th layer, and, as a result, the on-current is fed, without leakage, as a gate current to the first main thyristor. Accordingly, the reactive current components in the second auxiliary thyristor are reduced, and the first main thyristor is turned on.