The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 1990

Filed:

Mar. 29, 1989
Applicant:
Inventors:

Tadakuni Narabu, Kanagawa, JP;

Yasuhito Maki, Kanagawa, JP;

Tetsuya Kondo, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 24 ; 357 47 ; 357 48 ; 377 57 ; 377 58 ; 377 60 ; 377 62 ; 377 63 ;
Abstract

A charge transfer device, suitable for use, for example, in a solid state imager device, having a floating gate electrode in a charge detecting section, a protruding portion provided in at least one of the floating gate electrodes or a gate electrode arranged adjacent to the floating gate electrode, wherein the floating gate electrode and the gate electrode arranged adjacent to the floating gate electrode overlap each other at the protruding portion within an insulating layer, and whereby the parasitic capacitance associated with the floating gate electrode is decreased and the charge voltage converting gain is increased, rendering it possible to obtain an image signal with a good signal/noise ratio, when the charge transfer device is used for a solid state imager device.


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