The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 1990
Filed:
Nov. 04, 1987
Applicant:
Inventors:
Ryuuji Shibata, Higashiyamato, JP;
Ken Uchida, Higashiyamato, JP;
Toshifumi Takeda, Kodaira, JP;
Youichi Matsumoto, Kodaira, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
307304 ; 357 239 ; 357 41 ; 357 42 ; 357 63 ; 357 91 ;
Abstract
Disclosed in an N-type MISFET having the LDD structure in which the short-channel effect is reduced by employing arsenic, which has a smaller diffusion coefficient value than that of phosphorus, to form low- and high-impurity concentration regions which constitute in combination source and drain regions of the MISFET.