The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 1990
Filed:
Oct. 31, 1989
Arie Shahar, Aberdeen, NJ (US);
Walter J Tomlinson, III, Holmdel, NJ (US);
Bell Communications Research, Inc., Livingston, NJ (US);
Abstract
A method of producing a sloped surface in a semiconductor material. In the area where the slope is desired a dynamic mask is applied to the surface of the semiconductor. A standard mask is applied over the dynamic mask and patterned so that its edge laterally defines the bottom of the desired slope. The sample is then immersed in an etchant that etches the dynamic mask faster than the semiconductor material. The standard mask is not appreciably etched. The dynamic mask is progressively etched laterally, thereby dynamically exposing more of the semiconductor material to etchant and producing a sloped surface therein.