The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 1990
Filed:
Mar. 07, 1988
Applicant:
Inventors:
Yoshitaka Chiba, Gyoda, JP;
Noriyoshi Hirao, Kumagaya, JP;
Toru Sugihara, Kumagaya, JP;
Kenji Hasegawa, Saitama, JP;
Assignee:
Hitachi Metals, Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C / ;
U.S. Cl.
CPC ...
75230 ; 75245 ; 75248 ; 419 10 ; 419 23 ; 419 33 ; 419 34 ; 419 38 ; 419 45 ; 419 53 ; 419 55 ; 419 60 ; 501 96 ; 501154 ; 20429813 ; 252625 ; 252644 ;
Abstract
A high melting metal silicide sputtering target which comprises a fine texture whose stoichiometric composition grains of MSi.sub.2, where M represents a high melting metal, have a maximum grain size of 20 .mu.m, whose free silicon grains have a maximum grain size of 50 .mu.m and whose oxygen content is not more than 200 ppm and has a density ratio to the theoretical density of 99% or more has good film characteristics including the reduction in the number of grains formed on the sputtered film and is useful as an electrode material or a wiring material in semi-conductor devices.