The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 1990
Filed:
Mar. 07, 1988
Yoshitaka Chiba, Gyoda, JP;
Noriyoshi Hirao, Kumagaya, JP;
Toru Sugihara, Kumagaya, JP;
Kenji Hasegawa, Saitama, JP;
Hitachi Metals, Ltd., Tokyo, JP;
Abstract
A high melting metal silicide sputtering target which comprises a fine texture whose stoichiometric composition grains of MSi.sub.2, where M represents a high melting metal, have a maximum grain size of 20 .mu.m, whose free silicon grains have a maximum grain size of 50 .mu.m and whose oxygen content is not more than 200 ppm and has a density ratio to the theoretical density of 99% or more has good film characteristics including the reduction in the number of grains formed on the sputtered film and is useful as an electrode material or a wiring material in semi-conductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile