The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 1990
Filed:
Nov. 28, 1984
Saburo Yamamoto, Uda, JP;
Hiroshi Kayashi, Souraku, JP;
Taiji Morimoto, Nara, JP;
Seiki Yano, Kashihara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor laser device, includes (1) a first semiconductor layer having a mesa-shaped stripe, (2) a current blocking layer applied on the first semiconductor layer except the top of the mesa-shaped stripe of the first semiconductor layer, the current blocking layer allowing the electric current to flow only through the mountain-shaped region, (3) a first cladding layer applied on the current blocking layer and on the top of the mountain-shaped stripe of the first semiconductor layer, and having charge carriers of the same type with that of the first semiconductor layer, (4) an active layer applied on the first cladding layer, and (5) a second cladding layer applied on the active layer, and having charge carriers of the type opposite to that of the first cladding layer, wherein the first cladding layer, the active layer and the second cladding layer compose a multilayer structure of the double heterojunction type for the laser excitation. The first cladding layer is thin so that the laser light excited in the active layer reaches the current blocking region that is outside the mesa-shaped region while it hardly reaches the first semiconductor layer through the mesa-shaped region.