The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 1990
Filed:
Jul. 17, 1985
Applicant:
Inventor:
B Jayant Baliga, Clifton Park, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 22 ; 357 58 ; 357 89 ;
Abstract
A field controlled thyristor having its base doped more lightly near the gate than near the anode achieves a low forward voltage drop, high blocking gain, and fast switching speed at any given forward blocking voltage rating. Although the high resistivity region around the gate area allows the device to pinch off anode current flow at zero gate bias due to the gate junction inherent potential, a small forward gate voltage can trigger the device into conduction. The high resistivity of the channel area between gates provides DC blocking gains greater than 60. The device can be fabricated using conventional planar processing techniques.