The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 1990
Filed:
Feb. 24, 1989
Per Svedberg, Vallingby, SE;
Asea Brown Boveri AB, Vasteras, SE;
Abstract
A bidirectional semiconductor switch is produced in a semiconductor layer, such as silicon, arranged on an insulating base of, for example, sapphire. The switch has two highly doped main contact regions. Between these regions the switch has a voltage absorbing part comprising a weakly doped layer, located next to the surface of the semiconductor layer, of the same conductivity type as the main contact regions, and a weakly doped layer, located next to the base of the opposite conductivity type. Between each one of the contact regions and the weakly doped layer located near the surface, normally non-conducting MOS structures are arranged. By simultaneously controlling the two MOS structures to a conducting state, the switch becomes conducting and is able to carry current in an optional direction between the main contacts.