The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 1990
Filed:
Jun. 02, 1988
Terence D Schemmel, Santa Barbara, CA (US);
Samuel F Pellicori, Santa Barbara, CA (US);
Santa Barbara Research Center, Goleta, CA (US);
Abstract
A durable quarter wave antireflection coating for a photodetecting device 20, the photodetecting device being formed within a radiation absorbing layer 22 of HgCdTe which is epitaxially grown upon a surface of a substantially transparent Group II-VI substrate 24 having an index of refraction of between approximately 2.2 and 2.8. By example, the substrate 24 may comprise CdZnTe or CdTe. The antireflection coating 26 is formed upon a radiation receiving surface of the substrate 24. The antireflection coating may comprise a layer of CeO.sub.x F.sub.(3.0-x), where x has a value within the range of approximately zero to approximately 1.0. The CeO.sub.x F.sub.(3.0-x) layer is formed by an ion beam sputter technique, the CeO.sub.x F.sub.(3-x) layer being sputtered from a source comprised of CeF.sub.3 in the presence of a predetermined pressure of oxygen. In general, the antireflection coating may comprise a fluoride compound formed with a metal of the Lanthanide rare earth series which is substantially transparent to infrared radiation.