The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 1990
Filed:
Jun. 21, 1985
Applicant:
Inventor:
William I Lehrer, Los Altos, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156644 ; 65 6053 ; 156653 ; 156656 ; 156657 ; 1566591 ; 156662 ; 357 71 ; 357 73 ; 437228 ; 437235 ; 501 55 ;
Abstract
A process is disclosed for forming a planarized or smooth surface binary glass insulating film comprised of germanium dioxide and silicon dioxide by a spin-on process. The resulting structure has a film thickness uniformity which varies less than 5% over the surface of the wafer. The structure is formed by mixing a predetermined solution of TEOS and TEOG in a lower alcohol or ketone solvent and catalyzing by the addition of sufficient acid to raise the pH to 1.5 to 2.0 to favor gel formation. The resultant solution is then spun on at an RPM selected to give the desired film thickness for a given solids content of the solution.