The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 1990
Filed:
Sep. 09, 1988
Applicant:
Inventors:
Bantval J Baliga, Schenectady, NY (US);
Andrew L Robinson, Ann Arbor, MI (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 20 ; 357 234 ; 357 238 ; 357 43 ; 357 86 ;
Abstract
An improved lateral insulated gate transistor includes a dual function anode and employs specially configured anode and cathode regions within the drift layer to promote lateral current flow. A vertical diode is disposed between a substrate cathode and anode of the device. Under forward bias conditions, the device exhibits insulated gate controlled conduction, and under reverse bias conditions, the device exhibits conduction between the substrate cathode and anode of the vertical diode.