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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4931515 B1

PDFFull Text
Date of Patent:
Jun. 05, 1990

Filed:

Dec. 08, 1988

Method for producing encapsulated semiconductor from improved epoxy

Applicant:
Inventors:

Hisao Takagishi, Kyoto, JP;

Shuichi Kanagawa, Osaka, JP;

Kunimasa Kamio, Suita, JP;

Kazuo Sumiyoshi, Oita, JP;

Assignee:

Sumitomo Chemical Company, Limited, Osaka, JP;

Attorney:

Wenderoth, Lind & Ponack

Primary Examiner:

Garnette D Draper

Int. Cl.
CPC ...
C08G / ;
U.S. Cl.
CPC ...
525504 ; 525507 ; 428413 ; 1741 / ; 1741 / ; 1741 / ; 528 87 ;
Abstract

An epoxy resin composition comprising a novolak type epoxy resin which is produced from a substituted-phenol novolak and epihalohydrin, and is 0.15 or less in a maximum absorbance of a 3% (W/V) dichloromethane solution of the epoxy resin, the absorbance being measured at a wave number of between 3570 and 3600 cm.sup.-1 with an infrared spectrophotometer having a cell of 2 mm length, which is useful particularly in encapsulating and laminating applications in electronic fields.

Find Patent Forward Citations

Takagishi, Hisao. (1990). Method for producing encapsulated semiconductor from improved epoxy (U.S. Patent No. 4931515). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4931515

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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